Industrial Electronics N1 — Document
April 2020 — N1 — Industrial Electronics
N1
2020
Nated Engineering
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Q1— Section header —
1.1Various options are given as possible answers to the following questions. Choose the answer and write only the letter (A D\ next to the question number (1.1.1
1.1.5\ in the ANSWER BOOK.
1.1.1The electrons of an atom ove around the nucleus in paths called ions. ave a positive charge. re arranged in orbits around the nucleus and have no charge. re negatively charged particles that move in orbits
1.1.2Ohm s law about the relationship that exists between vol tage, current and resistance states that urrent is directly proportional to the resistance and inversely proportional to the voltage.
1.1.3Intrinsic semiconductor materials are good conductors. poor insulators. either good conductors nor good insulators. good conductors and insulators.
1.1.4Polarisation occurs when xygen bubbles form around the carbon rod of a carbon/zinc cell. ydrogen bubbles form at the negative terminal of a cell. he electrolyte in a cell becomes dry. ydrogen bubbles form around the carbon rod.
1.1.5An increase in electrical pressure at the terminals of an electrolytic capacitor will ncrease the capacitance and decrease the charge. ncrease the charge. ecrease the capacitance. estroy the capacitor.
1.2Complete the following sentences by writing down only the missing word or words next to the question number (1.2.1
1.2.5\ in the ANSWER BOOK.
1.2.1ransistor can be used as a fast acting
1.2.2Diodes are constructed from P type and N type materi als and have junction.
1.2.3An atom with an atomic number of ten has free electrons.
1.2.4Primary cells cannot be
1.2.5
1.3Choose term from COLUMN B that matches a description in COLUMN A. Write only the letter (A \ next to the question number (1.3.1
1.3.5\ in the ANSWER BOOK. COLUMN COLUMN
1.3.5Doping refers to the addition of impurities to this material Charges that flow from the negative terminal to the positive terminal of a cell sed to measure specific gravity ond between adjacent atoms
1.4Indicate whether the followin g statements are TRUE or FALSE by writing only rue or alse next to the question number (1.4.1
1.4.5\ in the ANSWER BOOK.
1.4.1Secondary cells can be recharged.
1.4.2The crystal lattice structure of germanium is simila r to that of silicon.
1.4.3
1.4.4A voltmeter is always connected in series in a close d circuit.
1.4.5
1.5Choose the correct word or words from those given in brackets. Write only the word or words next to the question number (1.5.1
1.5.5\ in the ANSWER BOOK.
1.5.1A capacitor blocks the flow of (direct/alternating\ current.
1.5.2A peak peak value is ( one/two/four \ times the amplitude of a sine wave.
1.5.3Magnetic lines of force move from the (north pole/south pole\ to (south pole/north pole\ outside a magnet.
1.5.4Zener diode can conduct when it is (forward biased/reverse biased/forward or reverse biased\.
1.5.525
Q2— Section header —
2.1TWO resistors connected across a 50 (1% tolerance\.
2.1Draw a circuit diagram representing the above information. (6\
2.2Calculate the total resistance of the circuit (6\
2.3Determine the current flow in the circuit.
2.4Calculate the power dissipated in the circuit. (3\
2.5What is the colour code of the internal resistor? (4\
2.6Calculate the voltage drop across the internal resistor. (3\ [25]25
Q3— Section header —
3.1
3.1.1otal capacitance of the circuit (4\
3.1.2harge developed across all the capacitors in the circuit (3\
3.2A mains transformer has a turn s ratio of 5:1. When the primary winding is connected to the mains supply of 240 volts, a current of 1,0 ampere flows through the secondary winding. Determine the following
3.2.1oltage across the secondary winding (3\
3.2.2urrent flow through the primary winding (3\
3.3State whether this circuit is a step up or step down transformer (1\ Sketch the IEC circuit symbols for each of the following: Carbon resistor
Q4— Section header —
4.1Define each of the following:
4.1.1Polarisation (carbon zinc cells\
4.1.2Extrinsic semiconductor
4.1.3Semiconductor
4.1.4Ionic bond
4.1.5Pentavalent (5 (10\
4.2Calculate the following:
4.2.1Total emf of the battery
4.2.2Total resistance of the circuit
4.2.3Internal resistance of the battery
4.2.4Current flow through the external resistor
4.2.5oltage drop across the external resistor (5 (10\
4.325
Mark Allocation
Total100 marks
Sections25 + 25 + 25 + 25 = 100 marks
Paper information
TitleDocument
SubjectIndustrial Electronics
LevelN1
Document typeQuestion paper
Year2020
MonthApril
Pages8
Downloads2
Examination context
Decade2020s
Years ago6y
SeasonAutumn (SH)
Start dayWednesday
Exam periodApril 2020
Days since exam2,384
About Industrial Electronics examination preparation
Industrial Electronics covers semiconductor devices, amplifiers, power supplies, and digital logic circuits. The examination tests both theoretical knowledge and practical circuit analysis.
How to use this resource for revision
A TVET past examination paper is most useful when it is treated as an active revision exercise. Try the questions yourself before checking the corresponding memorandum. Where you make an error, identify the reason — was it a knowledge gap, a calculation mistake, an interpretation issue, or an examination technique problem?
For stronger examination practice, complete the paper without unnecessary interruptions and keep track of the questions that take the most time. Afterwards, review the memorandum and separate knowledge gaps from mistakes caused by interpretation, calculation, structure, or examination technique.
semiconductor theory
circuit analysis
component identification
digital logic principles
interpreting circuit diagrams
A practical revision approach
Practice circuit analysis with correct formulae and units. The memorandum rewards accurate calculations, correct component identification, and proper interpretation of circuit diagrams.
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