Logic Systems N3 — Document

December 2023 — N3 — Logic Systems

N3 2023 Nated Engineering
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🎯 100 marks ⏱️ 3h 📄 6 pages 📝 52 items found 🔑 1 key info
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Questions — A Preview of What to Expect in the Document

52
This section provides a quick preview of questions from the document. It may not display every question or the complete wording of each one. For the full content, including diagrams, tables and other information, view the original PDF above.
Q1— Section header —
1.2Briefly describe a half subtractor. (2
1.3Calculate the following and show all your conversions and calculations
1.3.1from 16 10 in the binary number system and convert the final answer to the hexadecimal number
1.3.2Multiply 25,5 10 by 2,25 10 in the binary number system and convert the answer back to the decimal number system.
1.4FIGURE 1 is truth table
Q1— Section header —
Q2— Section header —
2.1Write a short definition of each of the following terms as applied in data communication and coding
2.1.1Hamming code
2.1.2Self complementing code
2.1.3ASCII c ode
2.1.4Weighted code
2.1.5EBCDIC code (5\
2.2Use the Hamming code to add the necessary parity bits to the following word: 1101 01 (6\
2.3Encode or decode the following numbers as indicated and show the work ing
2.3.1Convert 101010000101 XS3 CODE to a decimal number.
2.3.2Convert 657 10 to an 8421 BCD code.
2.3.3 Convert 264 10 to the Gray code. (3 3\ (9\
3.1FIGURE 2 shows the circuit of the 7041 IC package that contains four 2 input NAND gates . A nswer the following
3.1.1What would you connect to PIN 7?
3.1.2What would you connect to PIN 14? (2\
3.2Draw a switch circuit for each of the following logic gates
3.2.1NOT gate
3.2.2OR gate
3.2.3AND gate (3 3\ (9\
3.3Compare bi polar IC technology and MOS technology in terms of the following:
3.3.1Input voltage
3.3.2Power consumption
3.3.3Speed (6\
3.4Draw a circuit diagram of a 2 input DTL NOR gate. (3\ [20]20
Q4— Section header —
4.1State FIVE important characteristics that should be use when comparing different types of memories.
4.2Indicate whether the following statements are TRUE or FALSE by writing only 'True' or 'F alse' next to the question number (4.2.1
4.2.5\in the ANSWER BOOK.
4.2.1A d ynamic memory cell is always a MOS type.
4.2.2A static MOS memory cell consists of a flip flop with a capacitive element.
4.2.3The advantage of a bi polar cell is that it has greater power consumption.
4.2.4An optical disc is an example of magnetic storage.
4.2.5RAM stands for Read Access Memory. (5
4.3What is the meaning of the following flip flop
4.3.1 Leading edge triggered flip flop
4.3
4.4Draw a logic circuit of a clocked D type flip flop that employs inverter and
Q5— Section header —
5.1With reference to pulse characteristics , explain what is meant by the following imes
5.1.1Delay time
5.1.2Storing time
5.1.3Switch on time
5.1.4
5.2Briefly explain what is meant by module 7 counter (2\
5.3What is a ring counter? (2\ Draw a labelled diagram of

Mark Allocation

Total100 marks
Sections20 + 20 + 20 + 20 + 20 = 100 marks

Key Information

Contact Number0101000010

Paper information

TitleDocument
SubjectLogic Systems
LevelN3
Document typeQuestion paper
Year2023
MonthDecember
Pages6
Downloads1

Examination context

Decade2020s
Years ago3y
SeasonSummer (SH)
Start dayFriday
Exam periodDecember 2023
Days since exam1,044

About Logic Systems examination preparation

This TVET examination resource can be used as part of a structured revision programme. Past papers are most useful when learners attempt questions independently, work within a realistic time limit, and review their answers afterwards.

How to use this resource for revision

A TVET past examination paper is most useful when it is treated as an active revision exercise. Try the questions yourself before checking the corresponding memorandum. Where you make an error, identify the reason — was it a knowledge gap, a calculation mistake, an interpretation issue, or an examination technique problem?

For stronger examination practice, complete the paper without unnecessary interruptions and keep track of the questions that take the most time. Afterwards, review the memorandum and separate knowledge gaps from mistakes caused by interpretation, calculation, structure, or examination technique.

understanding question requirements
applying subject knowledge
working under time constraints
checking answers
identifying revision priorities

A practical revision approach

Start by completing the resource without looking at the memorandum. Review incorrect and incomplete answers afterwards and make a short revision list based on the areas that caused difficulty.

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File size305 KB
Pages6
Archived on8 September 2026
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